Chip Industry Technical Paper Roundup: July 28

HW methods to throttle AI; M3D DRAM; interconnect signal-integrity analysis; 3D mask effects in high/hyper-NA EUV litho; compute-in-interconnect and memory; NbAs nanowire interconnects; and 3D conformal thin-film patterning.

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New technical papers recently added to Semiconductor Engineering’s library:

Technical Paper Research Organizations
Hardware Mechanisms to Dynamically Throttle AI Performance Princeton University
Optimization of 3D-DRAM Architecture with Oxide-Semiconductor Channel through Process and Device Simulation imec, KU Leuven, Samsung Electronics, Lam Research
Fast Interconnect Signal Integrity Analysis For Integrated Circuit Design Via Graph Transformers University at Buffalo, University of Stuttgart, IBM Research
Benefits of 3D mask effects in high-NA and hyper-NA EUV lithography Fraunhofer IISB, ASML
Compute-in-Interconnect and Memory with Reconfigurable Precision for LLM Inference National University of Singapore
Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects Cornell University, NYCU, IBM Research, Johns Hopkins University, Penn State et al.
Lithographic patterning of conformal thin films on 3D structures using Scaffold-architected Lift-off masks KTH Royal Institute of Technology

Find more semiconductor research papers here.

 



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