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EUV lithography is a soft X-ray technology.


Extreme ultraviolet (EUV) lithography is a soft X-ray technology, which has a wavelength of 13.5nm. Today’s EUV scanners enable resolutions down to 22nm half-pitch. In a system, an EUV light source makes use of a high power laser to create a plasma. This, in turn, helps emit a short wavelength light inside a vacuum chamber. In the chamber, the system uses several multilayer mirrors, which act to reflect light via interlayer interference.
EUV was originally slated to be introduced at the 45/40nm process node, but problems with the power source to achieve sufficient throughput have forced multiple delays. It was considered a critical component at 16/14nm as a way of avoiding double patterning using 193nm immersion. It currently will likely miss 10nm, as well, with the insertion point now slated for 7nm-at which point even EUV will require double patterning.

Semiconductor Devices: Physics and Technology

Extreme Ultraviolet (EUV) Lithography

EUV Lithography