Knowledge Center
Knowledge Center

Induced Gate Noise

Thermal noise within a channel


Induced gate noise is related to thermal noise within the channel of a device. When transistors operate in the gigahertz range, random potential fluctuations in the channel result in channel noise which will be coupled to the gate terminal through the gate oxide capacitance and cause the induced gate noise.

Several models are used to analyze this, often based on the length of the channel and the impacts are felt primarily by high frequency devices.